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ACE4612B View Datasheet(PDF) - ACE Technology Co., LTD.

Part Name
Description
MFG CO.
ACE4612B
ACE
ACE Technology Co., LTD. ACE
'ACE4612B' PDF : 6 Pages View PDF
1 2 3 4 5 6
ACE4612B
Complementary Enhancement Mode Field Effect Transistor
Ordering information
ACE4612B XX + H
Halogen - free
Pb - free
FM : SOP-8
N-channel Electrical Characteristics TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Static
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Leakage Current
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Diode Forward Voltage
Turn-On Delay Time
Turn-Off Delay Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS
IDSS
IGSS
RDS(ON)
VGS(th)
gFS
VSD
Td(on)
td(off)
Ciss
Coss
Crss
VGS=0V, ID=250uA
VDS=24V, VGS=0V
VGS=±20V, VDS=0V
VGS=10V, ID=5A
VGS=4.5V, ID=5A
VDS=VGS, IDS=250uA
VDS=5V, ID=5A
IS=1A, VGS=0V
VDS=15V, VGS=10V
RGEN=3Ω, RL=2.3Ω
VDS=15V, VGS=0V
f=1MHz
Min.
30
1
Typ.
33
27
39
1.5
7.3
0.76
407
113
57
Max. Unit
V
1
uA
±100 nA
50
mΩ
63
3
V
S
V
18
ns
70
pF
P-channel Electrical Characteristics TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250uA
Zero Gate Voltage Drain Current
IDSS
VDS=-24V, VGS=0V
Gate Leakage Current
IGSS
VGS=±20V, VDS=0V
Static Drain-Source On-Resistance RDS(ON)
VGS=-10V, ID=-4A
VGS=-4.5V, ID=-3A
Gate Threshold Voltage
VGS(th)
VDS=VGS, IDS=250uA
Forward Transconductance
gFS
VDS=-5V, ID=-4A
Diode Forward Voltage
VSD
IS=-1A, VGS=0V
Turn-On Delay Time
Turn-Off Delay Time
Td(on)
td(off)
VDS=-15V, VGS=-10V
RGEN=3Ω, RL=2.5Ω
Min.
-30
-1
Typ.
-36
61
77
-1.5
12
-0.8
Max. Unit
V
-1 uA
±100 nA
65
mΩ
85
-3
V
S
V
18
ns
70
VER 1.2 2
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