ACE4612BFM-H View Datasheet(PDF) - ACE Technology Co., LTD.

Part Name

Description

MFG CO.

ACE4612BFM-H

Complementary Enhancement Mode Field Effect Transistor

ACE Technology Co., LTD. 

1 2 3 4 5 6

ACE4612B

Complementary Enhancement Mode Field Effect Transistor

Description

ACE4612B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The

complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other

applications.

Features

N-channel

 VDS=30V

 VGS=20V

 ID=6A

P-channel

 VDS=-30V

 VGS=20V

 ID=-4A

Absolute Maximum Ratings

Parameter

Symbol N-channel P-channel Unit

Drain-Source Voltage

Gate-Source Voltage

VDSS

30

VGSS

±20

-30 V

±20 V

Continuous Drain Current (Note 1)

ID

6

Pulse Drain Current (Note 2)

IDM

30

-4

A

-30

Total Power Dissipation (Note 1)

PD

1

1

W

Operating and Storage Temperature Range TJ,TSTG -55 to 150 -55 to 150 OC

Packaging Type

SOP-8

VER 1.2 1

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