ACE4953BFM-H View Datasheet(PDF) - ACE Technology Co., LTD.
Part Name
Description
MFG CO.
'ACE4953BFM-H' PDF : 6 Pages View PDF
ACE4953B
Dual P-Channel Enhancement Mode Field Effect Transistor
Description
The ACE4953B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate
charge. This device is suitable for use as a load switch or in PWM applications.
Features
VDS(V)=-20V
ID=-5.5A (VGS=-10V)
RDS(ON)<55mΩ (VGS=-10V)
RDS(ON)<58mΩ (VGS=-4.5V)
RDS(ON)<80mΩ (VGS=-2.5V)
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous) * AC TA=25 OC
TA=70 OC
VDSS
VGSS
ID
-20 V
±12 V
-5.5
A
-4.4
Drain Current (Pulse) * B
IDM
-25 A
Power Dissipation
TA=25 OC
TA=70 OC
PD
2
W
1.5
Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC
Packaging Type
SOP-8
VER 1.2 1
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