ACE5807B
P-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics
TA=25℃, unless otherwise specified.
Parameter
Drain-Source Breakdown
Voltage
Symbol
V(BR)DSS
Test Conditions
Static
VGS= 0V, ID= -250μA
Min Typ Max Unit
-12
V
Zero Gate Voltage Drain Current IDSS1
VDS = -12 V, VGS = 0V
-1 μA
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
Resistance
Forward Trans Conductance
Diode Forward Voltage
Maximum Body-Diode
Continuous Current
VGS(TH)
IGSS
RDS(on)
gFS
VSD
IS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Qg
Qgs
Qgd
td( on )
tr
td( off )
tf
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance Crss
Note:
VGS = VDS , IDS= -250μA
VGS= ±8V , VDS=0V
VGS = -4.5V , ID= -6.7A
VGS = -2.5V , ID= -6.2A
VDS= -10V , ID= -6.7A
ISD= -1.6A , VGS= 0V
Switching
VDS= -6V, ID= -10A,
VGS= -4.5V
VDD= -10V, RL=0.75Ω,
ID= -1A, VGEN= -4.5V
RG= 10Ω
Dynamic
VGS=0V,VDS= -10V,
f= 1.0MHz
-0.4 -0.7 -1
V
±100 nA
12 18 mΩ
15 22 mΩ
40
S
-0.6 -1.0 V
-16 A
35 48 nC
5
nC
10
nC
11
ns
30
ns
30
ns
10
ns
2700
pF
680
pF
590
pF
A. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C.
B. The Power dissipation PD is based on RθJAt ≤ 10s value and the maximum allowed junction temperature of 150℃. The value
in any given application depends on the user's specific board design.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150℃. Ratings are based on low frequency and duty
cycles to keep initial TJ=25℃.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large
heatsink, assuming a maximum junction temperature of TJ(MAX)=150℃. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C.
VER 1.2 2