ACE7401B View Datasheet(PDF) - ACE Technology Co., LTD.
Part Name
Description
MFG CO.
'ACE7401B' PDF : 7 Pages View PDF
Packaging Type
DFN3*3-8L
ACE7401B
P-Channel Enhancement Mode Field Effect Transistor
Ordering information
ACE7401B XX + H
Halogen - free
Pb - free
NN : DFN3*3-8L
Electrical Characteristics
TA=25 OC unless otherwise noted
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Leakage Current
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous
Current
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Symbol
V(BR)DSS
IDSS
IGSS
RDS(ON)
VGS(th)
gFS
VSD
Conditions
Static
VGS=0V, ID=-250uA
VDS=-30V, VGS=0V
VGS=±20V, VDS=0V
VGS=-20V, ID=-10A
VGS=-10V, ID=-10A
VGS=-5V, ID=-7A
VDS=VGS, IDS=-250µA
VDS=-5V, ID=-10A
ISD=-1A, VGS=0V
IS
Switching
Qg
Qgs
Qgd
Td(on)
tf
VDS=-15V, ID=-12A
VGS=-10V
VDS=-15V, RL=1.25Ω,
VGS=-10V, RGEN=3Ω
Min.
-30
-1.5
Typ.
8.2
9.2
13.1
-1.8
26
-0.72
46.64
7.84
9.96
19.24
8.56
Max. Unit
V
-1 uA
100 nA
13
14 mΩ
17
-3
V
S
-1
V
-4.2 A
60.63
10.2 nC
12.95
38.48
ns
17.12
VER 1.2 2
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