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ACE8810B View Datasheet(PDF) - ACE Technology Co., LTD.

Part Name
Description
MFG CO.
'ACE8810B' PDF : 6 Pages View PDF
1 2 3 4 5 6
ACE8810B
Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Ordering information
ACE8810B XX + H
Halogen - free
Pb - free
TM : TSSOP-8
Electrical CharacteristicsTA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250uA
20
V
Zero Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V
Gate Leakage Current
IGSS
VGS=±8V, VDS=0V
1
uA
±3.5 ±10 uA
Static Drain-Source On-Resistance RDS(ON)
VGS=4.5V, ID=8A
VGS=2.5V, ID=7A
14
21
17
25 mΩ
VGS=1.8V, ID=6A
22
33
Gate Threshold Voltage
VGS(th) VDS=VGS, IDS=250uA 0.4
0.5
1
V
Forward Transconductance
gFS
VDS=5V, ID=6.5A
13
S
Diode Forward Voltage
VSD
Maximum Body-Diode Continuous
Current
IS
ISD=2.5A, VGS=0V
0.79 1.6 V
2.5 A
Switching
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS=10V, ID=8A
VGS=4.5V
Qgd
13.8 17.94
4.1 5.33 nC
5.6 7.28
Turn-On Delay Time
Td(on)
6.2 12.4
Turn-On Rise Time
Turn-Off Delay Time
tf
td(off)
VDS=10V, VGS=5V
RGEN=3Ω, RL=1.5Ω
12.7 25.4
ns
51.7 103.4
Turn-Off Fall Time
tf
16
32
Dynamic
Input Capacitance
Ciss
1160
Output Capacitance
Coss
VDS=10V, VGS=0V
f=1MHz
104
pF
Reverse Transfer Capacitance
Crss
29
Note: A. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with TA=25°C. The value in any given application depends on the user's specific board design.
B. Repetitive rating, pulse width limited by junction temperature.
C. The current rating is based on the t10s junction to ambient thermal resistance rating.
VER 1.2 2
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