ACE8810B
Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Ordering information
ACE8810B XX + H
Halogen - free
Pb - free
TM : TSSOP-8
Electrical CharacteristicsTA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250uA
20
V
Zero Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V
Gate Leakage Current
IGSS
VGS=±8V, VDS=0V
1
uA
±3.5 ±10 uA
Static Drain-Source On-Resistance RDS(ON)
VGS=4.5V, ID=8A
VGS=2.5V, ID=7A
14
21
17
25 mΩ
VGS=1.8V, ID=6A
22
33
Gate Threshold Voltage
VGS(th) VDS=VGS, IDS=250uA 0.4
0.5
1
V
Forward Transconductance
gFS
VDS=5V, ID=6.5A
13
S
Diode Forward Voltage
VSD
Maximum Body-Diode Continuous
Current
IS
ISD=2.5A, VGS=0V
0.79 1.6 V
2.5 A
Switching
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS=10V, ID=8A
VGS=4.5V
Qgd
13.8 17.94
4.1 5.33 nC
5.6 7.28
Turn-On Delay Time
Td(on)
6.2 12.4
Turn-On Rise Time
Turn-Off Delay Time
tf
td(off)
VDS=10V, VGS=5V
RGEN=3Ω, RL=1.5Ω
12.7 25.4
ns
51.7 103.4
Turn-Off Fall Time
tf
16
32
Dynamic
Input Capacitance
Ciss
1160
Output Capacitance
Coss
VDS=10V, VGS=0V
f=1MHz
104
pF
Reverse Transfer Capacitance
Crss
29
Note: A. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with TA=25°C. The value in any given application depends on the user's specific board design.
B. Repetitive rating, pulse width limited by junction temperature.
C. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
VER 1.2 2