ACE9435BFM View Datasheet(PDF) - ACE Technology Co., LTD.
Part Name
Description
MFG CO.
'ACE9435BFM' PDF : 5 Pages View PDF
ACE9435B
P-Channel Enhancement Mode Field Effect Transistor
Description
This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench
technology, which is especially used to minimize on-state resistance. This device is particularly suited for
low voltage application such as portable equipment, power management and other battery powered
circuits, and low in-line power loss are needed in a very small outline surface mount package.
Features
VDS(V)=-320V, ID=-5.24.1A
RDS(ON)=51mΩ @ VGS=-10V
RDS(ON)=68mΩ @ VGS=-4.5V
High density cell design for low RDS(ON)
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Continuous TA=25 OC
Pulsed (Note 2)
Total Power Dissipation (Note 1)
Operating and Storage Temperature Range
Symbol Max Unit
VDSS
VGSS
-30 V
±20 V
-5.2
ID
A
-50
PD
1.5 W
TJ,TSTG -55 to 150 OC
Packaging Type
SOP-8
8
7
6
5
1
2
3
4
VER 1.2 1
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