ACE9926BFM View Datasheet(PDF) - ACE Technology Co., LTD.
Part Name
Description
MFG CO.
'ACE9926BFM' PDF : 7 Pages View PDF
ACE9926B
Dual N-Channel Enhancement Mode Field Effect Transistor
Ordering information
ACE9926B XX + H
Halogen - free
Pb - free
FM : SOP-8
Electrical Characteristics
TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250uA
20
V
Zero Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V
1
uA
Gate Leakage Current
IGSS
VGS=±12V, VDS=0V
100 nA
Drain-Source On-State Resistance RDS(ON)
VGS=4.5V, ID=6A
VGS=2.5V, ID=5.2A
21
30
mΩ
30
40
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=250uA 0.65 0.78
1
V
Forward Transconductance
gFS
VDS=5V, ID=6A
12
S
Diode Forward Voltage
VSD
Maximum Body-Diode Continuous
Current
IS
VGS=0V, ISD=1.7A
0.8
1.0
V
1.7 A
Switching
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS=10V, VGS=4.5V,
ID=6A
Qgd
6.24 8.11
1.64 2.13 nC
1.34 1.74
Turn-On Delay Time
td(on)
10.4 20.8
Turn-On Rise Time
Turn-Off Delay Time
tr
td(off)
VGS=4.5V, VDS=10V,
RL=10Ω, RGEN=6Ω
4.4
8.8
ns
27.36 54.72
Turn- Off Rise Time
tf
4.16 8.32
Dynamic
Input Capacitance
Ciss
522.3
Output Capacitance
Coss
VDS=8V, VGS=0V
f=1MHz
98.48
pF
Reverse Transfer Capacitance
Crss
74.69
Note: A. The value of RθJA is measured with the device mounted on 1*1in FR-4 board with 2oz Copper, in a still air environment
with TA=25°C. The value in any given application depends on the user's specific board design.
B. Repetitive rating, pulse width limited by junction temperature.
C. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
VER 1.2 2
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