ACT8810
Rev 9, 15-Nov-12
ActivePathTM CHARGER
TYPICAL PERFORMANCE CHARACTERISTICS CONT’D
(VCHG_IN = 5V, RDCCC = 20k, RISET = 680Ω, TA = 25°C, unless otherwise specified.)
VAC Applied, CHGLEV = LOW
CH1
CH2
CH3
100mA
CH1
CH2
CH3
450mA
VAC Applied, CHGLEV = HIGH
CH4
CH4
CH1: VUSB, 2.00V/div
CH2: VCHG_IN, 2.00V/div
CH3: IBAT, 500mA/div
CH4: VVAC, 2.00V/div
TIME: 400µs/div
VAC Removed, CHGLEV = LOW
CH1
CH2
CH3
100mA
CH4
CH1: VUSB, 2.00V/div
CH2: VCHG_IN, 2.00V/div
CH3: IBAT, 500mA/div
CH4: VVAC, 2.00V/div
TIME: 400µs/div
VAC Removed, CHGLEV = HIGH
CH1
CH2
CH3
450mA
CH4
CH1: VUSB, 2.00V/div
CH2: VCHG_IN, 2.00V/div
CH3: IBAT, 500mA/div
CH4: VVAC, 2.00V/div
TIME: 400µs/div
CH1: VUSB, 2.00V/div
CH2: VCHG_IN, 2.00V/div
CH3: IBAT, 500mA/div
CH4: VVAC, 2.00V/div
TIME: 400µs/div
Battery Leakage Current vs. Battery Voltage
10
8
6
4
2
No CHG_IN
CHGLEV = 0
0
0
1
2
3
4
5
Battery Voltage (V)
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
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Copyright © 2012 Active-Semi, Inc.