ADP3208C View Datasheet(PDF) - ON Semiconductor
Part Name
Description
MFG CO.
'ADP3208C' PDF : 37 Pages View PDF
ADP3208C
ELECTRICAL CHARACTERISTICS VCC = PVCC1 = PVCC2 = BST1 = BST2 = High = 5.0V, FBRTN = GND = SW1 = SW2 = PGND1
= PGND2 = Low = 0 V, EN = VATFREQ = High, DPRSLP = 0 V, PSI = 1.05 V, VVID = 1.2000 V, TA = −40°C to 100°C, unless otherwise
noted (Note 1). Current entering a pin (sunk by the device) has a positive sign. RREF = 80 kW.
Parameter
Symbol
Conditions
Min Typ Max Unit
HIGH−SIDE MOSFET DRIVER
Transition Times
Dead Delay Times
BST Quiescent Current
trDRVH
tfDRVH
tpdhDRVH
BST = PVCC, CL = 3 nF, Figure 6
BST = PVCC, CL = 3 nF, Figure 6
BST = PVCC, Figure 6
EN = L (Shutdown)
EN = H, no switching
15
35
ns
13
31
39
50
ns
0.6
5.0
mA
15
LOW−SIDE MOSFET DRIVER
Pullup Resistance, Sourcing
Current
BST = PVCC
1.6
3.3
W
Pulldown Resistance, Sinking
Current
BST = PVCC
0.8
2.5
W
Transition Times
Progation Delay Times
SW Transition Times
SW Off Threshold
PVCC Quiescent Current
trDRVL
tfDRVL
tpdhDRVL
tTOSW
VOFFSW
CL = 3 nF, Figure 6
CL = 3 nF, Figure 6
CL = 3 nF, Figure 6
DRVH = L, SW = 2.5 V
EN = L (Shutdown)
EN = H, no switching
15
35
ns
14
35
10
45
ns
210
250
450
ns
1.6
V
1.0
15
mA
240
BOOTSTRAP RECTIFIER SWITCH
On Resistance
EN = L or EN = H and DRVL = H
3.0
6.0
1.0
W
1. All limits at temperature extremes are guaranteed via correlation using standard Statistical Quality Control (SQC).
2. Guaranteed by design or bench characterization, not production tested.
3. Timing is referenced to the 90% and 10% points, unless otherwise noted.
IN
DRVL
tpdlDRVL tfDRVL
tpdlDRVH
trDRVL
DRVH
(WITH RESPECT TO SW)
tpdhDRVH trDRVH
VTH
tfDRVH
VTH
tpdhDRVL
SW
1.0 V
Figure 6. Timing Diagram (Note 3)
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