AM29F200AT-55SCB View Datasheet(PDF) - Advanced Micro Devices
Part Name
Description
MFG CO.
AM29F200AT-55SCB
Advanced Micro Devices
'AM29F200AT-55SCB' PDF : 39 Pages View PDF
PRELIMINARY
DC CHARACTERISTICS (continued)
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
ILI
Input Load Current
VIN = VSS to VCC, VCC = VCC Max
ILIT
A9, OE#, RESET# Input
Load Current
VCC = VCC Max;
A9, OE#, RESET# = 12.5 V
±1.0
µA
50
µA
ILO
Output Leakage Current
VOUT = VSS to VCC, VCC = VCC Max
ICC1
VCC Active Read Current
(Note 1)
CE# = VIL, OE# = VIH
Byte
Word
±1.0
µA
20
40
mA
28
50
ICC2
VCC Active Program/Erase
Current (Notes 2, 3)
CE# = VIL, OE# = VIH
30
50
mA
ICC3
VCC Standby Current
Note (Note 4)
VCC = VCC Max,
CE# = VCC ± 0.5 V, OE# = VIH
1
5
µA
VIL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage
0.7 x VCC
VCC + 0.3 V
VID
Voltage for Autoselect and
Temporary Sector Unprotect
VCC = 5.0 V
11.5
12.5
V
VOL
VOH1
VOH2
VLKO
Output Low Voltage
Output Low Voltage
Low VCC Lock-Out Voltage
IOL = 5.8 mA, VCC = VCC Min
IOH = –2.5 mA, VCC = VCC Min
IOH = –100 µA, VCC = VCC Min
0.85 VCC
VCC – 0.4
3.2
0.45
V
V
V
4.2
V
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
2. ICC active while Embedded Program or Erase Algorithm is in progress.
3. Not 100% tested.
4. ICC3 for extended temperature is 20 µA max.
Am29F200A
23
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