AM90N06-25PCFM View Datasheet(PDF) - Analog Power
Part Name
Description
MFG CO.
'AM90N06-25PCFM' PDF : 4 Pages View PDF
Analog Power
N-Channel 60-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
TO-220CFM saves board space
• Fast switching speed
• High performance trench technology
AM90N06-25PCFM
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
60
26.5 @ VGS = 10V
32.5 @ VGS = 4.5V
TO-220CFM
ID (A)
87a
D1
G1
S1
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TC=25oC ID
IDM
60
V
±20
87
A
240
Continuous Source Current (Diode Conduction)a
IS
90
A
Power Dissipationa
Operating Junction and Storage Temperature Range
TC=25oC PD
300
W
TJ, Tstg -55 to 175 oC
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
RθJA
Maximum Junction-to-Case
RθJC
Notes
a. Package Limited
b. Pulse width limited by maximum junction temperature
Maximum Units
62.5
oC/W
3.2
oC/W
PRELIMINARY
1
Publication Order Number:
DS-AM90N06-25_C
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