AMMC-6420 View Datasheet(PDF) - Avago Technologies
Part Name
Description
MFG CO.
'AMMC-6420' PDF : 8 Pages View PDF
AMMC-6420 DC Specifications/Physical Properties [1]
Symbol Parameters and Test Conditions
Units
Min.
Typ.
Max.
Id
Drain Supply Current
mA
(under any RF power drive and temperature)
(Vd=5.5 V, Vg set for Id Typical)
800
1000
Vg
Gate Supply Operating Voltage
(Id(Q) = 800 (mA))
V
-0.8
-0.6
-0.4
qch-b
Thermal Resistance[2]
°C/W
8.9
(Backside temperature, Tb = 25°C)
Notes:
1. Ambient operational temperature TA=25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (θch-b) = 10.7°C/W at Tchannel (Tc) = 120°C as measured using infrared microscopy. Thermal Resis-
tance at backside temperature (Tb) = 25°C calculated from measured data.
AMMC-6420 RF Specifications [3, 4, 5] (TA= 25°C, Vd=5.5, Id(Q)=800 mA, Zo=50 Ω)
Parameters and Test
Symbol Conditions
Units Minimum Typical
Maximum
Sigma
Gain
Small-signal Gain[4] dB
16.5
20
0.45
P-1dB
Output Power at 1dB dBm 27
29
0.27
Gain Compression
P-3dB
Output Power at 3dB dBm
30
0.23
Gain Compression
OIP3
Third Order Intercept dBm
38
0.75
Point; Df=100MHz;
Pin=-20dBm
RLin
Input Return Loss[4] dB
-3
0.23
RLout
Output Return Loss[4] dB
-6
0.25
Isolation Min. Reverse Isolation dB
-45
1.10
Notes:
3. Small/Large -signal data measured in wafer form TA = 25°C.
4. 100% on-wafer RF test is done at frequency = 8, 12, and 18 GHz.
5. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may be improved over a
more narrow bandwidth by application of additional conjugate, linearity, or power matching.
LSL
LSL
LSL
17
18
19
20
27
28
29
0
1
28
29
Gain at 12 GHz
P-1dB at 8 GHz
P-1dB at 18 GHz
Typical distribution of Small Signal Gain and Output Power @P-1dB. Based on 1500 part sampled over several produc-
tion lots
Share Link: 
