AMMC-6425 View Datasheet(PDF) - Avago Technologies
Part Name
Description
MFG CO.
'AMMC-6425' PDF : 7 Pages View PDF
Absolute Maximum Ratings [1,2,3,4, 5]
Symbol
Parameters
Unit
Max
Notes
Vd
Positive Supply Voltage[2]
V
6
2/
Vg
Gate Supply Voltage
PD
Power Dissipation[2,3]
Pin
CW Input Power[2]
Tch
Operating Channel Temp.[4,5]
V
-3 to 0.5
W
5.5
2/3/
dBm
23
2/
C
+150
4/5/
Tstg
Storage Case Temp.
C
-65 to +155
Tmax
Maximum Assembly Temp (30 sec max)
C
+320
Note:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
2. Combinations of supply voltage, drain current, input power, and output power shall not exceed PD.
3. When operate at this condition with a base plate temperature of 85C, the median time to failure (MTTF) is significantly reduced.
4. These ratings apply to each individual FET
5. The operating channel temperature will directly affect the device MTTF. For maximum life, it is recommended that junction temperatures be
maintained at the lowest possible levels
DC Specifications/ Physical Properties [1]
Symbol
Parameters and Test Conditions
Units
Id
Drain Supply Current(Vd=5 V, Vg set for Id Typical)
mA
650
Vg
Gate Supply Operating Voltage(Id(Q) = 650 (mA))
Rjc
Thermal Resistance[1](Channel-to-Backside)
V
-1.0
C/W
17.8
Tch
Channel Temperature
C
132
Note:
1. Assume AuSn soldering to an evaluation RF board at 85 °C base plate temperatures. Worst case is at saturated output power when DC power
consumption rises to 5.5W with 1.57W RF power delivered to load. Power dissipation is 3.93W and the temperature rise in the channel is 57 °C. In
this condition, the base plate temperature must be remained below 93 °C to maintain maximum operating channel temperature below 150°C.
RF Specifications [1,2, 3] (TA= 25C, Vd=5, Id(Q)=650 mA, Zo=50
Symbol
Parameters and Test Conditions
Units
Minimum
Typical
Freq
Operational Frequency
GHz
18
Gain
P-1dB
OIP3
Small-signal Gain [3, 4]
Output Power at 1dB[3] Gain Compression
Output Third Order Intercept Point
dB
dBm
dBm
22
24
27.5
29
38
RLin
Input Return Loss
dB
13
RLout
Output Return Loss
dB
13
Isolation
Reverse Isolation
dB
50
Notes:
1. Small/Large -signal data measured in on-wafer environment at TA = 25C.
2. This die part performance is verified by a functional test correlated to actual performance at one or more frequencies
3. Pre-assembly into package performance verified 100% on-wafer published specifications at Frequencies=18, 23, and 28GHz
4. The Gain and P1dB tested at 23GHz guaranteed with measurement accuracy ± 1.5 dB for gain and ±1.6dB for P1dB.
Maximum
28
2
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