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AO6404 View Datasheet(PDF) - Alpha and Omega Semiconductor

Part Name
Description
MFG CO.
AO6404
AOSMD
Alpha and Omega Semiconductor AOSMD
'AO6404' PDF : 4 Pages View PDF
1 2 3 4
AO6404
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
20
V
IDSS
Zero Gate Voltage Drain Current
VDS=16V, VGS=0V
TJ=55°C
10
µA
25
IGSS
Gate-Body leakage current
VDS=0V, VGS=±10V
10
µA
BVGSO Gate-Source Breakdown Voltage
VDS=0V, IG=±250uA
±12
V
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
0.5 0.75 1
V
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
30
A
VGS=10V, ID=8.5A
TJ=125°C
13.4 17
m
16
20
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=5A
VGS=2.5V, ID=4A
14.8 18 m
18.8 24 m
VGS=1.8V, ID=3A
25.5 33 m
gFS
Forward Transconductance
VDS=5V, ID=8A
36
S
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.73 1
V
IS
Maximum Body-Diode Continuous Current
2.9
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1810
pF
232
pF
200
pF
1.6
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VGS=4.5V, VDS=10V, ID=8.5A
VGS=10V, VDS=10V, RL=1.2,
RGEN=3
IF=8.5A, dI/dt=100A/µs
IF=8.5A, dI/dt=100A/µs
17.9
nC
1.5
nC
4.7
nC
2.5
ns
7.2
ns
49
ns
10.8
ns
22
ns
9.8
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev2: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
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