AP01N60J View Datasheet(PDF) - Advanced Power Electronics Corp
Part Name
Description
MFG CO.
'AP01N60J' PDF : 4 Pages View PDF
1.5
T C =25 o C
1
10V
6.0V
5.5V
5.0V
0.5
V G = 4.5 V
0
0
5
10
15
20
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
100
10
T j = 150 o C
1
T j = 25 o C
0.1
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
0.9
T C =150 o C
0.6
0.3
AP01N60H/J
10V
6.0V
5.5V
5.0V
V G = 4.5 V
0
0
5
10
15
20
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3
I D =0.8A
V G =10V
2
1
0
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
5
4
3
2
1
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
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