Qdatasheet_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

AP09N90CW View Datasheet(PDF) - Advanced Power Electronics Corp

Part Name
Description
MFG CO.
AP09N90CW
APEC
Advanced Power Electronics Corp APEC
'AP09N90CW' PDF : 4 Pages View PDF
1 2 3 4
AP09N90CW
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=3.6A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=125oC)
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
VDS=10V, ID=3.6A
VDS=900V, VGS=0V
VDS=720V, VGS=0V
VGS= ± 30V
ID=7.2A
VDS=540V
VGS=10V
VDD=450V
ID=7.2A
RG=6.8Ω,VGS=10V
RD=62.5Ω
VGS=0V
Output Capacitance
Reverse Transfer Capacitance
VDS=15V
f=1.0MHz
900 -
-
V
- 0.74 - V/
- 1.25 1.4 Ω
2
-
4V
-
3.6
-
S
-
-
10 uA
-
- 100 uA
-
- ±100 nA
- 50.7 80 nC
-
12
- nC
-
16
- nC
-
20
- ns
-
16
- ns
-
65
- ns
-
27
- ns
- 3097 5000 pF
- 516 - pF
-
19
- pF
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage3
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
IS=7.2A, VGS=0V
IS=7.2A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.5 A
- 673 - ns
- 9.6 - µC
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=6.8mH , RG=25Ω , IAS=6A.
3.Pulse width <300us , duty cycle <2%.
Share Link: GO URL

All Rights Reserved © qdatasheet.com  [ Privacy Policy ] [ Contact Us ]