ELECTRICAL / OPTICAL CHARACTERISTICS at TA=25°C
Parameter
Symbol
Wavelength at Peak Emission IF = 20mA
λpeak
Spectral Bandwidth at 50% Φ REL MAX
IF = 20mA
Δλ
Capacitance
C
Emitting Color
Infrared
Infrared
Infrared
AP2012SF4C-P22
Value
Unit
Typ.
Max.
880
-
nm
50
-
nm
90
-
pF
Forward Voltage IF = 20mA
VF [1]
Infrared
1.3
1.6
Reverse Current (VR = 5V)
IR
Infrared
-
10
l Temperature Coefficient of Wavelength
IF = 20mA, -10°C ≤ T ≤ 85°C
TCλ
Infrared
0.3
-
ia Temperature Coefficient of VF
IF = 20mA, -10°C ≤ T ≤ 85°C
TCV
Infrared
-1.3
-
t Notes:
1. Forward voltage: ±0.1V.
2. Wavelength value is traceable to CIE127-2007 standards.
3. Excess driving current and / or operating temperature higher than recommended conditions may result in severe light degradation or premature failure.
iden ABSOLUTE MAXIMUM RATINGS at TA=25°C
f Parameter
Symbol
n Power Dissipation
PD
o Reverse Voltage
VR
C Junction Temperature
Tj
Value
85
5
125
Operating Temperature
Top
-40 to +85
Storage Temperature
Tstg
-40 to +85
DC Forward Current
IF
50
Peak Forward Current
IFM [1]
1200
Electrostatic Discharge Threshold (HBM)
-
8000
Thermal Resistance (Junction / Ambient)
Rth JA [2]
320
Thermal Resistance (Junction / Solder point)
Rth JS [2]
240
Notes:
1. 1/100 Duty Cycle, 10μs Pulse Width.
2. Rth JA ,Rth JS Results from mounting on PC board FR4 (pad size ≥ 16 mm2 per pad).
3. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity – Ref JEDEC/JESD625-A and JEDEC/J-STD-033.
© 2017 Kingbright. All Rights Reserved. Spec No: DSAO8740 / 1203000168 Rev No: V.3B Date: 09/08/2017
V
uA
nm/°C
mV/°C
Unit
mW
V
°C
°C
°C
mA
mA
V
°C/W
°C/W
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