AP2301GN View Datasheet(PDF) - Advanced Power Electronics Corp
Part Name
Description
MFG CO.
'AP2301GN' PDF : 4 Pages View PDF
10
T A =25 o C
VGS= -5V
VGS= -4V
8
VGS= -3V
6
4
2
VGS= -2V
0
0
1
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
800
I D = -2A
600
T A =25 ℃
400
200
0
0
2
4
6
8
10
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
10
1
T j =150 o C
0
T j =25 o C
0
0.1
0.3
0.5
0.7
0.9
1.1
1.3
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP2301GN
10
T A =150 o C
VGS= -5V
VGS= -4V
8
VGS= -3V
6
4
VGS= -2V
2
0
0
1
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
1.6
I D = -2.8A
V GS = -5V
1.4
1.2
1
0.8
0.6
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
1.5
1.0
0.5
0.0
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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