AP4503GM View Datasheet(PDF) - Advanced Power Electronics Corp
Part Name
Description
MFG CO.
'AP4503GM' PDF : 7 Pages View PDF
AP4503GM
P-Channel
100
T A =25 o C
80
-10V
-7.0V
60
40
-5.0V
-4.5V
20
V G =-3.0V
0
0
1
2
3
4
5
6
7
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
60
I D = -6 A
T A =25 o C
50
40
30
20
2
4
6
8
10
-V GS ,Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
7
6
5
4
3
T j =150 o C
2
T j =25 o C
1
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
70
60 T A =150 o C
50
-10V
-7.0V
40
30
-5.0V
-4.5V
20
10
V G =-3.0V
0
0
1
2
3
4
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
I D =-6A
V G =10V
1.4
1.2
1.0
-6.3
-5
0.8
0.6
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.5
2
1.5
1
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
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