AP60T03GH/J View Datasheet(PDF) - Advanced Power Electronics Corp
Part Name
Description
MFG CO.
'AP60T03GH/J' PDF : 6 Pages View PDF
125
T C =25 o C
100
75
50
25
10V
8.0V
6.0V
5.0V
V G =4.0V
0
0
1
2
3
4
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
80
I D =15A
T C =25 ℃
60
40
20
0
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
100
10
T j =175 o C
1
T j =25 o C
0.1
0
0.5
1
1.5
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP60T03GH/J
90
T C =175 o C
60
10V
8.0V
6.0V
5.0V
30
V G =4.0V
0
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2
I D =20A
V G =10V
1.6
1.2
0.8
0.4
-50
25
100
175
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.8
2.3
1.8
1.3
0.8
0.3
-50
25
100
175
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
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