AP60T03GJ-HF View Datasheet(PDF) - Advanced Power Electronics Corp
Part Name
Description
MFG CO.
'AP60T03GJ-HF' PDF : 4 Pages View PDF
Advanced Power
Electronics Corp.
AP60T03GH/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Low Gate Charge
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters. The through-hole version (AP60T03GJ) are
available for low-profile applications.
BVDSS
RDS(ON)
ID
30V
12mΩ
45A
GD
S
TO-252(H)
GD
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
45
32
120
44
0.3
2.4
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
W/℃
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
3.4
62.5
110
Units
℃/W
℃/W
℃/W
1
201112077
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