AP85U03GH View Datasheet(PDF) - Advanced Power Technology
Part Name
Description
MFG CO.
'AP85U03GH' PDF : 5 Pages View PDF
Advanced Power
Electronics Corp.
AP85U03GH
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
D
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, □
low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
30V
5.5mΩ
75A
G
D
S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
EAS
TSTG
TJ
Linear Derating Factor
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
75
56
220
60
0.48
57.6
-55 to 175
-55 to 175
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)5
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
2.5
62.5
110
Units
V
V
A
A
A
W
W/℃
mJ
℃
℃
Units
℃/W
℃/W
℃/W
Data & specifications subject to change without notice
1
200807174
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