AP9938GEO-HF View Datasheet(PDF) - Advanced Power Electronics Corp
Part Name
Description
MFG CO.
'AP9938GEO-HF' PDF : 4 Pages View PDF
Advanced Power
Electronics Corp.
AP9938GEO-HF
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Low on-resistance
▼ Capable of 1.8V Gate Drive
▼ Optimal DC/DC Battery Application
▼ Halogen Free & RoHS Compliant Product
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
BVDSS
RDS(ON)
ID
20V
18mΩ
6A
Description
Advanced Power MOSFETs from APEC provide the designer with
D1
D2
the best combination of fast switching, ruggedized device design, G1
G2
ultra low on-resistance and cost-effectiveness.
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
TJ
Operating Junction Temperature Range
Rating
20
+8
6
4.8
20
1
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
125
Unit
℃/W
1
201210172
Share Link: 
