AP9962AGJ-HF View Datasheet(PDF) - Advanced Power Electronics Corp
Part Name
Description
MFG CO.
'AP9962AGJ-HF' PDF : 4 Pages View PDF
100
T C =25 o C
80
60
40
10V
7.0V
5.0V
4.5V
20
V G =3.0V
0
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
28
I D =16A
T C =25 o C
24
20
16
12
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
16
12
8
T j =150 o C
4
T j =25 o C
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP9962AGH/J-HF
80
T C =150 o C
60
40
10V
7.0V
5.0V
4.5V
20
V G =3.0V
0
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I D =20A
V G =10V
1.6
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
Share Link: 
