AP9T16GH View Datasheet(PDF) - Advanced Power Electronics Corp
Part Name
Description
MFG CO.
'AP9T16GH' PDF : 4 Pages View PDF
100
T C =25 o C
80
5.0V
4.5V
60
3.5V
40
2.5V
20
V G =1.5V
0
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
42
I D = 5.2 A
37
T C =25 o C
32
27
22
17
12
0
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
10
8
6
T j =150 o C
4
T j =25 o C
2
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP9T16GH/J
80
T C = 150 o C
60
40
5.0V
4.5V
3.5V
20
2.5V
V G =1.5V
0
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
I D =6A
1.4
V G =4.5V
1.2
1.0
0.8
0.6
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
1.5
1.0
0.5
0.0
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
Share Link: 
