APM2030NDC-TU View Datasheet(PDF) - Anpec Electronics

Part Name

Description

MFG CO.

APM2030NDC-TU

N-Channel Enhancement Mode MOSFET

Anpec Electronics 

1 2 3 4 5 6 7 8 9 10

APM2030ND

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Symbol

Parameter

VDSS

VGSS

ID*

IDM*

IS*

TJ

TSTG

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Diode Continuous Forward Current

Maximum Junction Temperature

Storage Temperature Range

VGS=4.5V

PD*

Power Dissipation for Single Operation

RθJA* Thermal Resistance-Junction to Ambient

Note:

*Surface Mounted on 1in2 pad area, t ≤ 10sec.

TA=25°C

TA=100°C

Rating

20

±12

6

24

2.3

150

-55 to 150

1.47

0.58

85

Unit

V

A

A

°C

W

°C/W

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol

Parameter

Test Condition

APM2030ND

Unit

Min. Typ. Max.

Static Characteristics

BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA

20

IDSS Zero Gate Voltage Drain Current VDS=18V, VGS=0V

TJ=85°C

VGS(th) Gate Threshold Voltage

VDS=VGS, IDS=250µA

0.5

IGSS Gate Leakage Current

VGS=±12V, VDS=0V

RDS(ON) a Drain-Source On-state Resistance

VSDa Diode Forward Voltage

VGS=4.5V, IDS=6A

VGS=2.5V, IDS=2A

ISD=1.5A, VGS=0V

Gate Charge Characteristics b

Qg Total Gate Charge

Qgs Gate-Source Charge

Qgd Gate-Drain Charge

VDS=10V, VGS=4.5V,

IDS=6A

V

1

µA

30

0.7 1

V

±100 nA

28 32

mΩ

38 45

0.7 1.3 V

9

11

3.6

nC

1

Copyright  ANPEC Electronics Corp.

2

Rev. B.1 - Mar., 2005

www.anpec.com.tw

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