APM2054NV
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS
VGSS
ID*
IDM*
IS*
TJ
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
PD*
Power Dissipation for Single Operation
RθJA* Thermal Resistance-Junction to Ambient
Note:
*Surface Mounted on 1in2 pad area, t ≤ 10sec.
VGS=10V
TA=25°C
TA=100°C
Rating
20
±16
5
20
3
150
-55 to 150
1.47
0.58
85
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
APM2054NV
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
20
IDSS
Zero Gate Voltage Drain Current
VDS=16V, VGS=0V
TJ=85°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250µA
0.6
IGSS Gate Leakage Current
VGS=±16V, VDS=0V
VGS=10V, IDS=5A
RDS(ON) a Drain-Source On-state Resistance VGS=4.5V, IDS=3.5A
VSDa Diode Forward Voltage
VGS=2.5V, IDS=2.5A
ISD=3A, VGS=0V
Gate Charge Characteristics b
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=10V, VGS=4.5V,
IDS=6A
0.9
35
45
110
0.85
1
30
1.5
±100
40
54
130
1.3
11 13
3.8
5.2
Unit
V
µA
V
nA
mΩ
V
nC
Copyright © ANPEC Electronics Corp.
2
Rev. B.2 - Apr., 2005
www.anpec.com.tw