APM2070PUC-TR View Datasheet(PDF) - Anpec Electronics
Part Name
Description
MFG CO.
'APM2070PUC-TR' PDF : 9 Pages View PDF
APM2070P
Absolute Maximum Ratings (Cont.) (TA = 25°C unless otherwise noted)
Symbol
Parameter
Rating
PD
Maximum Power Dissipation TA=25°C
50
TA=100°C
10
TJ
Maximum Junction Temperature
150
TSTG
Storage Temperature Range
RθJA*
Thermal Resistance Junction to Ambient
* Surface Mounted on FR4 Board, t ≤ 10 sec.
-55 to 150
50
Electrical Characteristics (TA = 25°C unless otherwise noted)
Unit
W
°C
°C
°C/W
Symbol
Parameter
Test Condition
Static
BVDSS
Drain-Source Breakdown
Voltage
VGS=0V , IDS=-250µA
IDSS
VGS(th)
IGSS
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
VDS=-16V , VGS=0V
VDS=VGS , IDS=-250µA
VGS=±16V , VDS=0V
RDS(ON)=
Drain-Source On-state
Resistance
VGS=-10V , IDS=-5A
VGS=-4.5V , IDS=-2.8A
VSD= Diode Forward Voltage
Dynamic>
IS=-0.5A , VGS=0V
Qg Total Gate Charge
VDS=-10V , IDS=-5A
Qgs
Qgd
td(ON)
Tr
td(OFF)
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
VGS=-4.5V
VDD=-10V , IDS=-5A ,
VGEN=-4.5V , RG=6Ω
Tf Turn-off Fall Time
Ciss Input Capacitance
VGS=0V
Coss Output Capacitance
VDS=-15V
Crss Reverse Transfer Capacitance Frequency=1.0MHz
Notes
a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b : Guaranteed by design, not subject to production testing
APM2070P
Unit
Min. Typ. Max.
-20
V
-1
µA
-0.7 -0.9 -1.5
V
±100 nA
78 102
mΩ
113 150
-0.7 -1.3
V
17
22
4
nC
5.2
13
25
36
67
ns
45
83
37
69
504
147
pF
118
Copyright ANPEC Electronics Corp.
2
Rev. A.1 - Sep., 2003
www.anpec.com.tw
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