APM2313 View Datasheet(PDF) - Anpec Electronics
Part Name
Description
MFG CO.
'APM2313' PDF : 9 Pages View PDF
APM2313
Absolute Maximum Ratings (Cont.) (TA = 25°C unless otherwise noted)
Symbol
PD
TJ
TSTG
RθjA
Parameter
Maximum Power Dissipation TA=25°C
TA=100°C
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance – Junction to Ambient
Rating
1.25
0.5
150
-55 to 150
100
Unit
W
°C
°C
°C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Static
BVDSS
Drain-Source Breakdown
Voltage
VGS=0V , IDS=-250µA
IDSS
Zero Gate Voltage Drain
Current
VDS=-16V , VGS=0V
VGS(th)
IGSS
Ra
DS(ON)
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
Resistance
VDS=VGS , IDS=-250µA
VGS=±10V , VDS=0V
VGS=-4.5V , IDS=-1.8A
VGS=-2.5V , IDS=-0.8A
VSDa Diode Forward Voltage
Dynamicb
ISD=-0.5A , VGS=0V
Qg
Qgs
Qgd
td(ON)
Tr
td(OFF)
Tf
Ciss
Coss
Crss
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS=-10V , IDS= -1.8A ,
VGS=-4.5V
Turn-on Delay Time
Turn-on Rise Time
VDD=-10V , IDS=-1A ,
Turn-off Delay Time
Turn-off Fall Time
VGEN=-4.5V , RG=6Ω
Input Capacitance
VGS=0V
Output Capacitance
VDS=-15V
Reverse Transfer Capacitance Frequency=1.0MHz
Notes
a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b : Guaranteed by design, not subject to production testing
APM2313
Unit
Min. Typ. Max.
-20
V
-1
µA
-0.5 -0.7 -1
V
±100 nA
108 140
mΩ
135 175
-0.8 -1.3
V
5.3
7
1.04
nC
0.62
8
16
7
15
ns
18
35
8
15
435
120
pF
65
Copyright ANPEC Electronics Corp.
2
Rev. A.1 - Jun., 2003
www.anpec.com.tw
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