APT100GF60JR View Datasheet(PDF) - Advanced Power Technology
Part Name
Description
MFG CO.
'APT100GF60JR' PDF : 3 Pages View PDF
DYNAMIC CHARACTERISTICS
APT100GF60JR
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Capacitance
VGE = 0V
VCE = 25V
f = 1 MHz
4400
480
pF
300
Qg
Total Gate Charge 3
Gate Charge
335
Qge Gate-Emitter Charge
VGE = 15V
VCC = 0.5VCES
40
nC
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Eon
Eoff
Gate-Collector ("Miller") Charge
IC = IC2
195
L Turn-on Delay Time
Resistive Switching (25°C)
50
A Rise Time
IC Turn-off Delay Time
HN Fall Time
VGE = 15V
200
VCC = 0.66VCES
IC = IC2
190
RG = 10W
270
EC N Turn-on Delay Time
50
T IO Rise Time
CE AT Turn-off Delay Time
AN M Fall Time
DV OR Turn-on Switching Energy
A INF Turn-off Switching Energy
Inductive Switching (150°C)
170
VCLAMP(Peak) = 0.66VCES
400
VGE = 15V
IC = IC2
95
RG = 10W
6.3
TJ = +150°C
5.2
ns
ns
mJ
Ets
Total Switching Losses
11.5
td(on)
tr
td(off)
tf
Ets
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Inductive Switching (25°C)
55
VCLAMP(Peak) = 0.66VCES
180
VGE = 15V
IC = IC2
ns
365
RG = 10W
90
TJ = +25°C
10.5
mJ
gfe Forward Transconductance
VCE = 20V, IC = IC2
6
S
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
MIN
RQJC
RQJA
Junction to Case
Junction to Ambient
WT Package Weight
Torque Mounting Torque (using a 6-32 or 3mm Binding Head Machine Screw)
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 IC = IC2, RGE = 25W, L = 17µH, Tj = 25°C
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYP
1.03
29.2
MAX
0.32
40
10
1.5
UNIT
°C/W
oz
gm
lb•in
N•m
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