APT6038BLL View Datasheet(PDF) - Advanced Power Technology

Part Name

Description

MFG CO.

APT6038BLL

POWER MOS 7™

Advanced Power Technology 

1 2

DYNAMIC CHARACTERISTICS

APT6038 BLL - SLL

Symbol Characteristic

Test Conditions

MIN TYP MAX

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VGS = 0V

VDS = 25V

f = 1 MHz

1860

330

21

Qg

Qgs

L Qgd

ICA td(on)

N tr

H td(off)

EC N tf

Total Gate Charge 3

Gate-Source Charge

Gate-Drain ("Miller ") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

VGS = 10V

VDD = 0.5 VDSS

ID = ID[Cont.] @ 25°C

VGS = 15V

VDD = 0.5 VDSS

ID = ID[Cont.] @ 25°C

RG = 1.6W

E T TIO SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

NC A Symbol

VA RM IS

D FO ISM

A IN VSD

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Pulsed Source Current 1 (Body Diode)

Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.])

43

10

19

11

7

24

6

MIN TYP MAX

17

68

1.3

t rr

Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)

400

Q rr Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)

6.0

dv/dt Peak Diode Recovery dv/dt 5

8

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

V/ns

THERMAL CHARACTERISTICS

Symbol Characteristic

MIN TYP MAX UNIT

RqJC

RqJA

Junction to Case

Junction to Ambient

0.47

40

°C/W

1 Repetitive Rating: Pulse width limited by maximum junction

3 See MIL-STD-750 Method 3471

temperature.

2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

4 Starting Tj = +25°C, L = 6.64mH, RG = 25W, Peak IL = 17A

5 dv/dt numbers reflect the limitations of the test circuit rather than the

device itself. IS £ -ID[Cont.] di/dt £ 700A/µs VR £ VDSS TJ £ 150°C

APT Reserves the right to change, without notice, the specifications and information contained herein.

TO-247 Package Outline

D3PAK Package Outline

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

15.49 (.610)

16.26 (.640)

6.15 (.242) BSC

20.80 (.819)

21.46 (.845)

5.38 (.212)

6.20 (.244)

3.50 (.138)

3.81 (.150)

0.40 (.016)

0.79 (.031)

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

1.01 (.040)

1.40 (.055)

2.21 (.087)

2.59 (.102)

5.45 (.215) BSC

2-Plcs.

Dimensions in Millimeters and (Inches)

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Gate

Drain

Source

4.98 (.196)

5.08 (.200)

1.47 (.058)

1.57 (.062)

15.95 (.628)

16.05 (.632)

1.04 (.041)

1.15 (.045)

13.41 (.528)

13.51 (.532)

0.46

0.56

(.018)

(.022)

{3

Plcs}

0.020 (.001)

0.178 (.007)

2.67 (.105)

2.84 (.112)

1.22 (.048)

1.32 (.052)

Revised

4/18/95

13.79 (.543)

13.99 (.551)

1.27 (.050)

1.40 (.055)

1.98 (.078)

2.08 (.082)

5.45 (.215) BSC

{2 Plcs.}

Revised

8/29/97

11.51 (.453)

11.61 (.457)

3.81 (.150)

4.06 (.160)

(Base of Lead)

Heat Sink (Drain)

and Leads

are Plated

Source

Drain

Gate

Dimensions in Millimeters (Inches)

APT's devices are covered by one or more of the following U.S.patents:

4,895,810

5,256,583

5,045,903

4,748,103

5,089,434

5,283,202

5,182,234

5,231,474

5,019,522

5,434,095

5,262,336

5,528,058

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