APT8018L2VFR View Datasheet(PDF) - Advanced Power Technology
Part Name
Description
MFG CO.
'APT8018L2VFR' PDF : 4 Pages View PDF
DYNAMIC CHARACTERISTICS
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 400V
ID = 43A @ 25°C
VGS = 15V
VDD = 400V
ID = 43A @ 25°C
RG = 0.6Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
IS
Continuous Source Current (Body Diode)
ISM Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -43A)
dv/dt Peak Diode Recovery dv/dt 5
Reverse Recovery Time
trr
(IS = -43A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Reverse Recovery Charge
Qrr
(IS = -43A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
IRRM
Peak Recovery Current
(IS = -43A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
APT8018L2VFR
MIN TYP MAX UNIT
10700
1180
pF
610
610
60
nC
360
19
17
ns
80
12
MIN TYP MAX UNIT
43 Amps
172
1.3 Volts
18 V/ns
300
ns
600
2.0
µC
6.0
15.5
Amps
27
THERMAL CHARACTERISTICS
Symbol Characteristic
RθJC
RθJA
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
0.15
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 3.46mH, RG = 25Ω, Peak IL = 43A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID43A di/dt ≤ 700A/µs VR ≤800V TJ ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.16
0.9
0.12
0.7
0.08
0.04
0
10-5
0.5
Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
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