AS7C33256PFS32A-100TQC View Datasheet(PDF) - Alliance Semiconductor

Part Name

Description

MFG CO.

AS7C33256PFS32A-100TQC

3.3V 256K ´ 32/36 pipeline burst synchronous SRAM

Alliance Semiconductor 

1 2 3 4 5 6 7 8 9 10

AS7C33256PFS32A

AS7C33256PFS36A

®

* VIL min = –2.0V for pulse width less than 0.2 × tRC.

† Input voltage ranges apply to 3.3V I/O operation. For 2.5V I/O operation, contact factory for input specifications.

TQFP thermal resistance

Description

Thermal resistance

(junction to ambient)*

Thermal resistance

(junction to top of case)*

* This parameter is sampled.

Conditions

Test conditions follow standard test

methods and procedures for measuring

thermal impedance, per EIA/JESD51

1–layer

4–layer

Symbol

θJA

θJA

θJC

Typical

40

22

8

Units

°C/W

°C/W

°C/W

DC electrical characteristics

Parameter

Symbol

Test conditions

–166

–150

–133

–100

Min Max Min Max Min Max Min Max Unit

Input leakage

current*

|ILI| VDD = Max, VIN = GND to VDD – 2 – 2 – 2 – 2 µA

Output leakage

current

|ILO|

OE ≥ VIH, VDD = Max,

VOUT = GND to VDD

– 2 – 2 – 2 – 2 µA

Operating power

supply current

Standby power

supply current

ICC

CE0 = VIL, CE1 = VIH, CE2 = VIL,

f = fMax, IOUT = 0 mA

–

475

–

450

–

425

–

325 mA

ISB

Deselected, f = fMax, ZZ ≤ VIL – 130 – 110 – 100 – 90

Deselected, f = 0, ZZ ≤ 0.2V

ISB1

all VIN ≤ 0.2V or ≥ VDD – 0.2V – 30 – 30 – 30 – 30 mA

ISB2

Deselected, f = fMax, ZZ ≥ VDD – 0.2V

All VIN ≤ VIL or ≥ VIH

–

30

–

30

–

30

–

30

Output voltage

VOL

IOL = 8 mA, VDDQ = 3.465V

– 0.4 – 0.4 – 0.4 – 0.4

V

VOH IOH = –4 mA, VDDQ = 3.135V 2.4 – 2.4 – 2.4 – 2.4 –

* LBO pin has an internal pull-up and input leakage = ±10 µa.

Note: ICC given with no output loading. ICC increases with faster cycles times and greater output loading.

DC electrical characteristics for 2.5V I/O operation

Parameter

Output leakage

current

Output voltage

Symbol

|ILO|

VOL

VOH

Test conditions

OE ≥ VIH, VDD = Max,

VOUT = GND to VDD

IOL = 2 mA, VDDQ = 2.65V

IOH = –2 mA, VDDQ = 2.35V

–166

–150

–133

–100

Min Max Min Max Min Max Min Max Unit

–1 1 –1 1 –1 1 –1 1 µA

– 0.7 – 0.7 – 0.7 – 0.7

V

1.7 – 1.7 – 1.7 – 1.7 –

12/12/00

ALLIANCE SEMICONDUCTOR

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