AT-42036-TR1 View Datasheet(PDF) - Agilent Technologies, Inc
Part Name
Description
MFG CO.
'AT-42036-TR1' PDF : 6 Pages View PDF
AT-42036 Absolute Maximum Ratings[1]
Symbol
Parameter
Units
Absolute Maximum
VEBO
Emitter-Base Voltage
V
1.5
VCBO
Collector-Base Voltage
V
20
VCEO
Collector-Emitter Voltage
V
12
IC
Collector Current
mA
80
PT
Power Dissipation[2,3]
mW
600
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature[4]
°C
-65 to 150
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 5.7 mW/°C for TC > 95°C.
4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a
circuit.
5. The small spot size of this technique results in a higher, though more accurate determination of
θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more
information.
Thermal Resistance[2,5]:
θjc = 175°C/W
Electrical Specifications
TA = 25°C
Symbol Parameters and Test Conditions[1]
Frequency
|S21E|2
Insertion Power Gain; VCE = 8 V, IC = 35 mA
f = 2.0 GHz
f = 4.0 GHz
P1 dB
G1 dB
Power Output @ 1 dB Gain Compression
VCE = 8 V, IC = 35 mA
1 dB Compressed Gain; VCE = 8 V, IC = 35 mA
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
NFO
Optimum Noise Figure: VCE = 8 V, IC = 10 mA
f = 2.0 GHz
f = 4.0 GHz
GA
Gain @ NFO; VCE = 8 V, IC = 10 mA
f = 2.0 GHz
f = 4.0 GHz
fT
Gain Bandwidth Product: VCE = 8 V, IC = 35 mA
hFE
Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA
ICBO
Collector Cutoff Current; VCB = 8 V
IEBO
Emitter Cutoff Current; VEB = 1 V
CCB
Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz
Note:
1. For this test, the emitter is grounded.
Units
Min.
Typ.
dB
10.0
11.0
5.0
dBm
21.0
20.5
dB
14.0
9.5
dB
2.0
3.0
dB
13.5
10.0
GHz
8.0
—
30
150
µA
µA
pF
0.28
Max.
270
0.2
2.0
2
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