AT-42070 Absolute Maximum Ratings
Symbol
Parameter
Units
Absolute
Maximum[1]
VEBO
Emitter-Base Voltage
V
1.5
VCBO
Collector-Base Voltage
V 20
VCEO
Collector-Emitter Voltage
V
12
IC
Collector Current
PT
Power Dissipation [2,3]
mA
80
mW
600
Tj
Junction Temperature
°C 200
TSTG
Storage Temperature
°C
-65 to 200
Thermal Resistance [2,4]:
θjc = 150°C/W
Notes:
1. Permanent damage may occur if any of
these limits are exceeded.
2. Tcase = 25°C.
3. Derate at 6.7 mW/°C for Tc > 110°C.
4. The small spot size of this technique
results in a higher, though more accurate
determination of θjc than do alternate
methods. See MEASUREMENTS section
“Thermal Resistance” for more information.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions[1]
|S21E| 2
Insertion Power Gain; VCE = 8 V, IC = 35 mA
Units Min. Typ. Max.
f = 2.0 GHz
dB 10.5 11.5
f = 4.0 GHz
5.5
P1 dB
Power Output @ 1 dB Gain Compression
VCE = 8 V, IC = 35 mA
G1 dB
1 dB Compressed Gain; VCE = 8 V, IC = 35 mA
f = 2.0 GHz
dBm 21.0
f= 4.0 GHz 20.5
f = 2.0 GHz
dB
15.0
f = 4.0 GHz
10.0
NFO
Optimum Noise Figure: VCE = 8 V, IC = 10 mA
GA
Gain @ NFO; VCE = 8 V, IC = 10 mA
f = 2.0 GHz
dB
1.9
f = 4.0 GHz
3.0
f = 2.0 GHz
dB
14.0
f = 4.0 GHz
10.5
fT
Gain Bandwidth Product: VCE = 8 V, IC = 35 mA
hFE
Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA
ICBO
Collector Cutoff Current; VCB = 8 V
IEBO
Emitter Cutoff Current; VEB = 1 V
CCB
Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz
GHz
8.0
— 30 150 270
µA 0.2
µA 2.0
pF
0.28
Note:
1. For this test, the emitter is grounded.