AT45DB080-TC View Datasheet(PDF) - Atmel Corporation
Part Name
Description
MFG CO.
'AT45DB080-TC' PDF : 18 Pages View PDF
Figure 2. Algorithm for Randomly Modifying Data
START
provide address of
page to modify
MAIN MEMORY PAGE
to BUFFER TRANSFER
(53H, 55H)
If planning to modify multiple
bytes currently stored within
a page of the Flash array
MAIN MEMORY PAGE PROGRAM
(82H, 85H)
BUFFER WRITE
(84H, 87H)
BUFFER to MAIN
MEMORY PAGE PROGRAM
(83H, 86H)
(2)
Auto Page Rewrite
(58H, 59H)
INCREMENT PAGE
(2)
ADDRESS POINTER
END
Note:
1. To preserve data integrity, each page of the DataFlash memory array must be updated/rewritten at least once within every
10,000 cumulative page erase/program operations.
2. A Page Address Pointer must be maintained to indicate which page is to be rewritten. The Auto Page Rewrite command
must use the address specified by the Page Address Pointer.
3. Other algorithms can be used to rewrite portions of the Flash array. Low power applications may choose to wait until 10,000
cumulative page erase/program operations have accumulated before rewriting all pages of the Flash array. See application
note AN-4 (“Using Atmel’s Serial DataFlashâ€) for more details.
16
AT45DB080
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