18.5 Program and Erase Characteristics
Symbol Parameter
Min Typ Max Units
tEP
tP
tBP
tPE
tBE
tSE
tCE
tSUSP
Page Erase and Programming Time (512/528 bytes)
Page Programming Time
Byte Programming Time
Page Erase Time
Block Erase Time
Sector Erase Time
Chip Erase Time
Suspend Time
Program
Erase
17
35
ms
3
4
ms
8
μs
12
35
ms
45
100
ms
0.7
1.4
s
45
80
s
10
15
μs
20
30
tRES
Resume Time
Program
Erase
10
15
μs
20
30
tOTPP
OTP Security Register Program Time
200
500
μs
Notes: 1. Values are based on device characterization, not 100% tested in production.
2. Not 100% tested (value guaranteed by design and characterization).
19. Input Test Waveforms and Measurement Levels
AC
Driving
Levels
0.9VCC
0.1VCC
tR, tF < 2ns (10% to 90%)
VCC/2
AC
Measurement
Level
20. Output Test Load
Device
Under
Test
30pF
AT45DB321E 49
8784E–DFLASH–10/2013