AT90S2313-4PI View Datasheet(PDF) - Atmel Corporation
Part Name
Description
MFG CO.
'AT90S2313-4PI' PDF : 92 Pages View PDF
AT90S2313
Parallel Programming
Characteristics
Figure 52. Parallel Programming Timing
XTAL1
tXHXL
tXLWL
Data & Contol
(DATA, XA0/1, BS)
tDVXH
tXLDX tBVWL
tWLWH
WR
RDY/BSY
tWHRL
OE
DATA
tXLOL
tOLDV
tRHBX
tWLRH
tOHDZ
Table 26. Parallel Programming Characteristics, TA = 25°C ± 10%, VCC = 5V ± 10%
Symbol Parameter
Min Typ Max Units
VPP
Programming Enable Voltage
11.5
12.5
V
IPP
Programming Enable Current
250.0 µA
tDVXH
Data and Control Setup before XTAL1 High
67.0
ns
tXHXL
XTAL1 Pulse Width High
67.0
ns
tXLDX
Data and Control Hold after XTAL1 Low
67.0
ns
tXLWL
XTAL1 Low to WR Low
67.0
ns
tBVWL
BS Valid to WR Low
67.0
ns
tRHBX
tWLWH
tWHRL
tWLRH
BS Hold after RDY/BSY High
WR Pulse Width Low(1)
WR High to RDY/BSY Low(2)
WR Low to RDY/BSY High(2)
67.0
ns
67.0
ns
20.0
ns
0.5 0.7 0.9 ms
tXLOL
XTAL1 Low to OE Low
67.0
ns
tOLDV
OE Low to DATA Valid
20.0
ns
tOHDZ
OE High to DATA Tri-stated
20.0 ns
tWLWH_CE WR Pulse Width Low for Chip Erase
5.0 10.0 15.0 ms
WR Pulse Width Low for Programming the Fuse
tWLWH_PFB Bits
1.0 1.5 1.8 ms
Notes: 1. Use tWLWH_CE for chip erase and tWLWH_PFB for programming the Fuse bits.
2. If tWLWH is held longer than tWLRH, no RDY/BSY pulse will be seen.
67
0839I–AVR–06/02
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