ATF-331M4 View Datasheet(PDF) - Avago Technologies
Part Name
Description
MFG CO.
'ATF-331M4' PDF : 14 Pages View PDF
ATF-331M4 Typical Performance Curves
40
2V
3V
4V
30
40
2V
3V
4V
30
20
20
10
10
0
0
20
40
60
80 100
Ids (mA)
Figure 6. OIP3, IIP3 & Bias[1] at 2 GHz.
0
0
20
40
60
80 100
Ids (mA)
Figure 7. OIP3, IIP3 & Bias[1] at 900 MHz.
25
2V
3V
4V
20
15
10
5
0
0
20
40
60
80
100
Idsq (mA)
Figure 8. P1dB vs. Bias[1,2] 2 GHz.
25
2V
3V
4V
20
15
10
5
0
0
20
40
60
80 100
Idsq (mA)
Figure 9. P1dB vs. Bias[1] 900 MHz.
16
1.4
2V
3V
15
4V
1.2
14
1.0
13
0.8
12
0.6
11
0.4
10
0.2
0
20
40
60
80 100
Id (mA)
Figure 10. NF & Gain vs. Bias[1] at 2 GHz.
22
1.4
2V
3V
21
4V
1.2
20
1.0
19
0.8
18
0.6
17
0.4
16
0.2
0 20 40 60 80 100 120
Id (mA)
Figure 11. NF & Gain vs. Bias[1] at 900 MHz.
Notes:
1. Measurements made on fixed tuned
production test board that was tuned
for optimal gain match with reasonable
noise figure at 4V 60 mA bias. This circuit
represents a trade-off between an optimal
noise match, maximum gain match and
a realizable match based on production
test board requirements. Circuit losses
have been de-embedded from actual
measurements.
2. Quiescent drain current, Idsq, is set
with zero RF drive applied. As P1dB is
approached, the drain current may increase
or decrease depending on frequency and
dc bias point. At lower values of Idsq the
device is running closer to class B as power
output approaches P1dB. This results in
higher P1dB and higher PAE (power added
efficiency) when compared to a device that
is driven by a constant current source as is
typically done with active biasing.
4
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