ATF-331M4-TR2 View Datasheet(PDF) - Avago Technologies
Part Name
Description
MFG CO.
'ATF-331M4-TR2' PDF : 14 Pages View PDF
ATF-331M4 Typical Performance Curves, continued
1.6
30
1.4
25
1.2
20
1.0
0.8
15
0.6
10
0.4
5
0.2
0
0
2
4
6
8
10
FREQUENCY (GHz)
Figure 12. Fmin vs. Frequency at 4 V, 60 mA.
0
0
2
4
6
8
10
FREQUENCY (GHz)
Figure 13. Associated Gain vs. Frequency
at 4 V , 60 mA.
35
30
25
20
15
10
85°C
5
25°C
-40°C
0
01 2 3 4 5 6 78
FREQUENCY (GHz)
Figure 15. P1dB, OIP3 vs. Frequency and
Temp at Vd = 4 V , Ids = 60 mA.
35
3.5
30
3.0
P1dB
25
OIP3
Gain
2.5
NF
20
2.0
15
1.5
10
1.0
5
0.5
0
0
0
20
40
60
80 100
Idsq (mA)
Figure 16. OIP3, P1dB, NF and Gain vs.
Bias[1,2] at 3.9 GHz.
25
2.0
85°C
25°C
-40°C
20
1.5
15
1.0
10
0.5
5
0
0
2
4
6
8
FREQUENCY (GHz)
Figure 14. Fmin & Ga vs. Frequency and Temp.
Vd = 4V, Ids = 60 mA.
35
3.5
30
3.0
P1dB
25
OIP3
Gain
2.5
NF
20
2.0
15
1.5
10
1.0
5
0.5
0
0
0
20
40
60
80 100
Idsq (mA)
Figure 17. OIP3, P1dB, NF at 5.8 GHz.
Notes:
1. Measurements made on fixed tuned
production test board that was tuned
for optimal gain match with reasonable
noise figure at 4V 60 mA bias. This circuit
represents a trade-off between an optimal
noise match, maximum gain match and
a realizable match based on production
test board requirements. Circuit losses
have been de-embedded from actual
measurements.
2. Quiescent drain current, Idsq, is set
with zero RF drive applied. As P1dB is
approached, the drain current may increase
or decrease depending on frequency and
dc bias point. At lower values of Idsq the
device is running closer to class B as power
output approaches P1dB. This results in
higher P1dB and higher PAE (power added
efficiency) when compared to a device that
is driven by a constant current source as is
typically done with active biasing.
5
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