ATF-531P8 View Datasheet(PDF) - HP => Agilent Technologies
Part Name
Description
MFG CO.
ATF-531P8
HP => Agilent Technologies
'ATF-531P8' PDF : 16 Pages View PDF
ATF-531P8 Absolute Maximum Ratings[1]
Symbol
VDS
VGS
VGD
IDS
IGS
Pdiss
Pin max.
TCH
TSTG
θch_b
Parameter
Drain–Source Voltage[2]
Gate–Source Voltage[2]
Gate Drain Voltage[2]
Drain Current[2]
Gate Current
Total Power Dissipation[3]
RF Input Power
Channel Temperature
Storage Temperature
Thermal Resistance[4]
Units
V
V
V
mA
mA
W
dBm
°C
°C
°C/W
Absolute
Maximum
7
-5 to 1
-5 to 1
300
20
1
+24
150
-65 to 150
63
Notes:
1. Operation of this device in excess of any one
of these parameters may cause permanent
damage.
2. Assumes DC quiescent conditions.
3. Board (package belly) temperatureTB is 25°C.
Derate 16 mW/°C for TB > 87°C.
4. Thermal resistance measured using
150°C Liquid Crystal Measurement method.
5. Device can safely handle +24 dBm RF Input
Power provided IGS is limited to 20mA. IGS
at P1dB drive level is bias circuit dependent.
400
0.9 V
300
0.8 V
200
0.7 V
100
0.6 V
0.5 V
0
01 2 3 4 5 6 7
VDS (V)
Figure 1. Typical I-V Curves
(Vgs = 0.1 per step).
Product Consistency Distribution Charts at 2 GHz, 4V, 135 mA[5,6]
180
160
Cpk = 1.0
Cpk = 1.2
150
Stdev = 0.14
Stdev = 0.71
120
120
-3 Std
90
+3 Std
80
-3 Std
+3 Std
60
40
30
0
0
0.3
0.6
0.9
1.2
NF (dB)
Figure 2. NF
Nominal = 0.6, USL = 1.0.
0
35 36 37 38 39
OIP3 (dBm)
Figure 3. OIP3
LSL = 35.5, Nominal = 38.1.
40 41
300
Cpk = 2.0
250
Stdev = 0.21
200
150
-3 Std
+3 Std
100
50
0
18.5
19.5
20.5
21.5
GAIN (dB)
Figure 4. Small Signal Gain
LSL = 18.5, Nominal = 20.2 dB, USL = 21.5.
240
Stdev = 0.12
200
160
-3 Std
120
+3 Std
80
40
0
24.2 24.4 24.6 24.8
P1dB (dBm)
Figure 5. P1dB
Nominal = 24.6.
25 25.2
Notes:
5. Distribution data sample size is 500 samples taken from 5 different wafers and 3 different lots.
Future wafers allocated to this product may have nominal values anywhere between the upper and
lower limits.
6. Measurements are made on production test board, which represents a trade-off between optimal
OIP3, NF and VSWR. Circuit losses have been de-embedded from actual measurements.
2
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