R7 is chosen to be 1 kΩ. This resistor keeps a small
amount of current flowing through Q2 to help maintain
bias stability. R6 is chosen to be 10 KΩ. This value of re-
sistance is high enough to limit Q1 gate current in the
presence of high RF drive levels as experienced when
Q1 is driven to the P1dB gain compression point. C7
provides a low frequency bypass to keep noise from Q2
effecting the operation of Q1. C7 is typically 0.1 µF.
Maximum Suggested Gate Current
The maximum suggested gate current for the
ATF-551M4 is 1 mA. Incorporating resistor R5 in the
passive bias network or resistor R6 in the active bias
network safely limits gate current to 500 µA at P1dB
drive levels. In order to minimize component count in
the passive biased amplifier circuit, the 3 resistor bias
circuit consisting of R1, R2, and R5 can be simplified
if desired. R5 can be removed if R1 is replaced with a
5.6KΩ resistor and if R2 is replaced with a 27KΩ resistor.
This combination should limit gate current to a safe
level.
ATF-551M4 Die Model
Advanced_Curtice2_Model
MESFETM1
NFET=yes
Rf=
PFET=no
Vto=0.3
Beta=0.444
Lambda=72e-3
Alpha=13
Tau=
Tnom=16.85
Idstc=
Gscap=2
Cgs=0.6193 pF
Cgd=0.1435 pF
Gdcap=2
Fc=0.65
Rgd=0.5 Ohm
Rd=2.025 Ohm
Ucrit=-0.72
Rg=1.7 Ohm
Vgexp=1.91
Rs=0.675 Ohm
Gamds=1e-4
Vtotc=
Betatce=
Rgs=0.5 Ohm
Ld=
Lg=0.094 nH
Ls=
Cds=0.100 pF
Rc=390 Ohm
Crf=0.1 F
Gsfwd=
Gsrev=
Gdfwd=
Gdrev=
R1=
R2=
Vbi=0.95
Vbr=
Vjr=
Is=
Ir=
Imax=
Xti=
Eg=
N=
Fnc=1 MHz
R=0.08
P=0.2
C=0.1
Taumdl=no
wVgfwd=
wBvgs=
wBvgd=
wBvds=
wldsmax=
wPmax=
AllParams=
ATF-551M4 Minipak Model
INSIDE Package
GATE
Port
G
Num=1
SOURCE
Port
S1
Num=2
Var VAR
Egn VAR1
K=5
Z2=85
Z1=30
C
C1
C=0.28 pF
TLINP
TL1
Z=Z2/2 Ohm
L=22 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL2
Z=Z2/2 Ohm
L=20 0 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL3
Z=Z2 Ohm
L=23.6 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
L
L1
L=0.234 nH
R=0.001
GaAsFET
FET1
Mode1=MESFETM1
Mode=Nonlinear
L
L6
L=0.147 nH
R=0.001
C
C2
C=0.046 pF
TLINP
TL9
Z=Z2 Ohm
L=11 mil
L
L4
L=0.281 nH
R=0.001
K=K
A=0.000
F=1 GHz
TanD=0.001
MSub
L
L7
L=0.234 nH
R=0.001
MSUB
MSub2
H=25.0 mil
Er=9.6
Mur=1
Cond=1.0E+50
Hu=3.9e+034 mil
T=0.15 mil
TanD=0
Rough=0 mil
TLINP
TL7
Z=Z2/2 Ohm
L=5.2 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL5
Z=Z2 Ohm
L=27.5 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
SOURCE
Port
S2
Num=4
DRAIN
Port
D
Num=3
21