B1017 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
MFG CO.
'B1017' PDF : 2 Pages View PDF
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SPTECH Product Specification
SPTECH Silicon PNP Power Transistor
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= -1.7V(Max)@IC= -3A
·Good Linearity of hFE
·Complement to Type 2SD1408
APPLICATIONS
·Designed for power amplifier applications.
·Recommended for 20~25W high-fidelity audio frequency
amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-4
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-0.4
A
2
W
25
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SB1017
SPTECH website：www.superic-tech.com
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