B200NF03 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

B200NF03

N-CHANNEL 30V - 0.0032 Ω - 120A D²PAK/I²PAK/TO-220 STripFET™ II POWER MOSFET

STMicroelectronics 

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STP200NF03 - STB200NF03 - STB200NF03-1

Electrical characteristics

The previous curve gives the safe operating area for unclamped inductive loads, single

pulse or repetitive, under the following conditions:

PD(AVE) = 0.5 * (1.3 * BVDSS * IAV)

EAS(AR) = PD(AVE) * tAV

Where:

IAV is the Allowable Current in Avalanche

PD(AVE) is the Average Power Dissipation in Avalanche (Single Pulse)

tAV is the Time in Avalanche

To de rate above 25 oC, at fixed IAV, the following equation must be applied:

IAV = 2 * (Tjmax - TCASE)/ (1.3 * BVDSS * Zth)

Where:

Zth = K * Rth is the value coming from Normalized Thermal Response at fixed pulse width

equal to TAV.

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