B200NF04L View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
B200NF04L
STMicroelectronics
'B200NF04L' PDF : 12 Pages View PDF
STP200NF04L - STB200NF04L - STB200NF04L-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic
Symbol
Parameter
gfs (4) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
tf(Voff)
tf
tc
Turn-off Delay Time
Fall Time
Cross-over Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDS = 15 V, ID = 20 A
VDS = 25V, f = 1 MHz, VGS = 0
VDD = 20 V, ID = 50 A,
RG= 4.7 Ω VGS = 4.5 V
(see Figure 16)
Vclamp = 32 V, ID = 100 A,
RG= 4.7 Ω VGS = 4.5 V
(see Figure 17)
VDD = 32 V, ID = 100 A,
VGS = 4.5 V
(see Figure 19)
Table 7: Source Drain Diode
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (1) Source-drain Current (pulsed)
VSD (4) Forward On Voltage
ISD = 160 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 100 A, di/dt = 100 A/µs,
VDD = 20 V, Tj = 150°C
(see Figure 16)
(1) Pulse width limited by safe operating area
(4). Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min.
Min.
Typ.
60
6400
1300
190
37
270
90
80
85
125
160
72
20
28.5
Typ.
88
240
5.5
Max.
90
Max.
100
400
1.3
Unit
S
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
Unit
A
A
V
ns
nC
A
3/12
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