B60NF06 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'B60NF06' PDF : 14 Pages View PDF
STB60NF06 - STB60NF06-1
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM(1)
Ptot
dv/dt (2)
Drain-source voltage (VGS = 0)
Drain-gate voltage (RGS = 20 kΩ)
Gate- source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating Factor
Peak diode recovery voltage slope
Tstg
Storage temperature
Tj
Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. ISD ≤60A, di/dt ≤400A/µs, VDD ≤24V, Tj ≤TJMAX
Value
60
60
± 20
60
42
240
110
0.73
4
-65 to 175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
TJ
Maximum lead temperature for soldering purpose
1.36
°C/W
62.5
°C/W
300
°C
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche Current, Repetitive or Not-Repetitive
IAR
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
EAS
(starting Tj = 25 °C, ID = IAR, VDD = 30 V)
Max Value
Unit
30
A
360
mJ
3/14
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