BAS116 View Datasheet(PDF) - Jiangsu High diode Semiconductor Co., Ltd
Part Name
Description
MFG CO.
'BAS116' PDF : 4 Pages View PDF
Typical Characteristics
Forward Characteristics
200
100
10
Reverse Characteristics
0.8
T =100 ℃
a
0.6
T =25 ℃
a
0.4
1
0.4
0.6
0.8
1.0
1.2
FORWARD VOLTAGE V (V)
F
Capacitance Characteristics
2.5
T =25℃
a
f=1MHz
2.0
1.5
1.0
0.5
0.0
0
5
10
15
20
REVERSE VOLTAGE V (V)
R
0.2
0
15
30
45
60
75
REVERSE VOLTAGE V (V)
R
Power Derating Curve
300
225
150
75
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (℃)
High Diode Semiconductor
2
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