BAS4 View Datasheet(PDF) - General Semiconductor
Part Name
Description
MFG CO.
'BAS4' PDF : 2 Pages View PDF
1
2
BAS40 THRU BAS40-06
ELECTRICAL CHARACTERISTICS
Ratings for one diode at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Reverse Breakdown Voltage
Tested with 10 µA Pulses
V(BR)R
40
–
–
Leakage Current
Pulse Test tp < 300 µs
at VR = 30 V
Forward Voltage
Pulse Test tp < 300 µs
at IF = 1 mA
at IF = 40 mA
IR
–
20
100
VF
–
–
380
VF
–
–
1000
Capacitance
at VR = 0 V, f = 1 MHz
Ctot
–
4.0
5
Reverse Recovery Time
trr
from IF = 10 mA through IR = 10 mA to IR = 1 mA
–
–
5
Thermal Resistance Junction to Ambient Air
RthJA
–
–
4301)
1) Device on fiberglass substrate, see layout
.30 (7.5)
.12 (3)
.59 (15)
.03 (0.8)
.47 (12)
0.2 (5)
.04 (1) .08 (2)
.04 (1)
.08 (2)
.06 (1.5)
.20 (5.1)
Dimensions in inches (millimeters)
Layout for RthJA test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
Unit
V
nA
mV
mV
pF
ns
K/W
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