BC847 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'BC847' PDF : 4 Pages View PDF
BC847
THERMAL DATA
Rthj-amb • Thermal Resistance Junction-Ambient
Rth j-SR • Thermal Resistance Junction-Substrat e
• Mounted on a ceramic substrate area = 10 x 8 x 0.6 mm
Max
420
Max
330
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCE = 30 V
VCE = 30 V
Tamb = 150 oC
V(BR)CES ∗ Collect or-Emitter
Breakdown Voltage
(VBE = 0)
V( BR)CBO ∗ Collect or-Base
Breakdown Voltage
(IE = 0)
V( BR)CEO ∗ Collect or-Emitter
Breakdown Voltage
(IB = 0)
V(BR)EBO
Em it t er -Base
Breakdown Voltage
(IC = 0)
VCE(sat)∗ Collect or-Emitter
Saturation Voltage
IC = 10 µA
IC = 10 µA
IC = 2 mA
IC = 10 µA
IC = 10 mA IB = 0.5 mA
IC = 100 mA IB = 5 mA
VBE(s at)∗ Base-Emitt er
Saturation Voltage
IC = 10 mA IB = 0.5 mA
IC = 100 mA IB = 5 mA
VBE(on)∗ Base-Emitt er O n
Voltage
IC = 2 mA
IC = 10 mA
VCE = 5 V
VCE = 5 V
hFE∗ DC Current G ain
IC = 10 µA
IC = 2 mA
VCE = 5 V
VCE = 5 V
fT
Transit ion F requency IC = 10 mA VCE = 5 V f = 100MHz
CCB Collect or Base
Capacitance
IE = 0 VCB = 10 V f = 1 MHz
CEB Collect or Emit ter
Capacitance
IC = 0 VEB = 0.5 V f = 1 MHz
NF Noise Figure
VCE = 5 V IC = 0.2 mA f = 1KHz
∆f = 200 Hz RG = 2 KΩ
hie∗ Input Impedance
VCE = 5 V IC = 2 mA f = 1KHz
hre∗ Reverse Voltage Ratio VCE = 5 V IC = 2 mA f = 1KHz
hfe∗ Small Signal Current VCE = 5 V IC = 2 mA f = 1KHz
Gain
hoe∗ Output Admittance
VCE = 5 V IC = 2 mA f = 1KHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
Min. Typ.
50
50
45
6
0.58
200
0.09
0.2
0.75
0.9
0.63
0.7
150
290
300
9
2
3.2 4.5
2
330
30
M a x.
15
5
0.25
0.6
0.7
0.77
450
4.5
10
8.5
60
Unit
nA
µA
V
V
V
V
V
V
V
V
V
V
MHz
pF
pF
dB
KΩ
10-4
µs
2/4
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